Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological Insulator Bi2Se3 Using Time- Resolved and Angle-Resolved Photoemission

نویسندگان

  • Y. H. Wang
  • D. Hsieh
  • E. J. Sie
  • H. Steinberg
  • D. R. Gardner
  • Y. S. Lee
  • P. Jarillo-Herrero
  • N. Gedik
چکیده

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Measurement of intrinsic dirac fermion cooling on the surface of the topological insulator Bi2Se3 using time-resolved and angle-resolved photoemission spectroscopy.

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Auxiliary Material for EPAPS: Measurement of intrinsic Dirac fermion cooling on the surface of a topological insulator Bi2Se3 using time- and angle-resolved photoemission spectroscopy

Two types of single crystal Bi2Se3 samples are prepared which allow us to span the surface doping range investigated in the main text. For the high doping level samples where ED = 0.28 eV below EF , stoichiometric mixture of Bi and Se are used. And for the low doping level samples where ED = 0.06 eV, the initial mixture of Bi:Se = 2:4.06 are used. ED in between these two levels are tuned throug...

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تاریخ انتشار 2012